LMBT2222ATT1G datasheet(2/7 Pages) LRC

2 / 7 page

LMBT2222ATT1G, S-LMBT2222ATT1G

General Purpose Transistor NPN Silicon

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(Note 1)

(IC = 1.0 mA, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 μA, IE = 0)

Emitter−Base Breakdown Voltage

(IE = 10 µA, IC = 0)

Base Cutoff Current

(VCE = 60 V, VEB = 3.0 V)

Collector Cutoff Current

(VCE = 60 V, VEB = 3.0 V)

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mA, VCE = 10 V)

(IC = 1.0 mA, VCE = 10 V)

(IC = 10 mA, VCE = 10 V)

(IC = 150 mA, VCE = 10 V)

(IC = 500 mA, VCE = 10 V)

Collector–Emitter Saturation Voltage

(IC = 150 mA, IB = 15 mA)

(IC = 500 mA, IB = 50 mA)

Base−Emitter Saturation Voltage

(IC = 150 mA, IB = 15 mA)

(IC = 500 mA, IB = 50 mA)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mA, VCE = 20 V, f = 100 MHz)

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 V, IC = 0, f = 1.0 MHz)

Input Impedance

(VCE = 10 V, IC = 10 mA, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = 10 V, IC = 10 mA, f = 1.0 kHz)

Small−Signal Current Gain

(VCE = 10 V, IC = 10 mA, f = 1.0 kHz)

Output Admittance

(VCE = 10 V, IC = 10 mA, f = 1.0 kHz)

Noise Figure

(VCE=10 V, IC=100µA, RS=1kΩ, f = 1 kHz)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

V(BR)CEO

V(BR)CBO

V(BR)EBO

IBL

100

HFE

100

ICEX

VCE(sat)

0.3

VBE(sat)

0.6

1.2

MHz

250

Cobo

Cibo

hie

kΩ

0.25

1.25

hre

X10

hfe

375

hoe

µmhos

200

Leshan Radio Company, LTD.

2/6

−4

Collector Cutoff Current

(VCB = 60 V, IE = 0)

Emitter Cutoff Current

(VEB = 3.0 V, IC = 0)

ICBO

100

IEBO

100

Rev.C

Mar. 2021

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