April 1991

2

Philips Semiconductors

Product specification

N-channel dual-gate MOS-FET

BF997

FEATURES

• Protected against excessive input voltage surges by

integrated back-to-back diodes between gates

and source

• Integrated drain resistance to suppress oscillation in the

frequency range greater than 1 GHz.

APPLICATIONS

• UHF and VHF applications such as:

– UHF/VHF television tuners

– Professional communication equipment

• Especially intended for use in pre-amplifiers in CATV

tuners with a large tuning range up to 500 MHz.

PINNING

PIN

SYMBOL

DESCRIPTION

1

s, b

source

2

d

drain

gate 2

gate 1

Fig.1 Simplified outline (SOT143) and symbol.

Marking code: MKp.

handbook, halfpage

s,b

d

g

1

g

2

43

2

1

Top view

MAM039

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143

microminiature package with interconnected source

and substrate.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

drain-source voltage

−

20

V

drain current

−

30

mA

total power dissipation

−

200

mW

junction temperature

−

150

°C

transfer admittance

18

−

mS

−

pF

feedback capacitance

−

fF

F

noise figure

1

−

dB

Y

fs