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BFE520 Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BFE520 Arkusz danych(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1996 Oct 08 3 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to Ts =118 °C; note 1 − 1W Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point; note 1 single loaded 230 K/W double loaded 115 K/W |
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