BAL99 datasheet(3/10 Pages) NEXPERIA

3 / 10 page

2003 Dec 12

NXP Semiconductors

Product data sheet

High-speed diode

BAL99

FEATURES

• Small plastic SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage: max. 70 V

• Repetitive peak reverse voltage: max. 70 V

• Repetitive peak forward current: max. 500 mA.

APPLICATIONS

• High-speed switching in e.g. surface mounted circuits.

DESCRIPTION

The BAL99 is a high-speed switching diode fabricated in

planar technology, and encapsulated in the small SOT23

plastic SMD package.

PINNING

DESCRIPTION

not connected

cathode

anode

handbook, halfpage

MAM231

n.c.

Fig.1

Simplified outline (SOT23) and symbol.

Marking code:

JFp = made in Hong Kong;

JFt = made in Malaysia;

JFW = made in China.

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

Device mounted on an FR4 printed-circuit board.

TYPE NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BAL99

−

plastic surface mounted package; 3 leads

SOT23

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRRM

repetitive peak reverse voltage

−

continuous reverse voltage

−

continuous forward current

see Fig.2; note 1

−

215

IFRM

repetitive peak forward current

−

500

IFSM

non-repetitive peak forward current

square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs

−

tp = 1 ms

−

tp = 1 s

−

0.5

Ptot

total power dissipation

Tamb = 25 °C; note 1

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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