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BGF200 Arkusz danych(PDF) 5 Page - Infineon Technologies AG |
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BGF200 Arkusz danych(HTML) 5 Page - Infineon Technologies AG |
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5 / 6 page ![]() Table 2 Electrical Characteristics1) 1) at T A = 25 °C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Resistors R 1, R2, R4 R 1,2,4 2090 2200 2310 Ω Resistor R 3, R5 R 3,5 47.5 50 52.5 Ω Capacitances C 1,C2,C3,C4 C 1,2,3,4 800 1000 1350 pF Capacitances C 5 C 5 120 150 200 pF Substrate leakage currents all pins to GND I 100 nA V R = 3 V Insertion loss 2)Insertion loss (see also Figure 3) strongly depends upon source and load impedance. For RF test purposes a 50 Ω environment is used. 2) pins C 3 to B1, C1 IL 30 dB F = 0.1... 6 GHz, Z S = ZL = 50 Ω BGF200_Schematic.vsd C3 C3 1n0 R3 50R C2 1n0 B3, GND1 R1 2k2 A3 R2 2k2 C1 1n0 C2, GND3 B1 C1 R4 2k2 C4 1n0 B2, GND2 C5 150p A2 R5 50R BGF200 Microphone Filter and ESD Protection Data Sheet 5 V2.1, 2006-10-17 Figure 2 Schematic |
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