3

Absolute Maximum Ratings

Thermal Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V

Input or Output Voltage Applied for all Grades. . . . . . . GND -0.3V to

VCC +0.3V

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

Operating Conditions

Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Operating Temperature Ranges:

HM-6516B-9, HM-6516-9 . . . . . . . . . . . . . . . . . . . -40oC to +85oC

Thermal Resistance

θJA

θJC

CERDIP Package . . . . . . . . . . . . . . . .

48oC/W

8oC/W

CLCC Package . . . . . . . . . . . . . . . . . .

66oC/W

12oC/W

Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC

Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC

Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC

Die Characteristics

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25953 Gates

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6516B-9, HM-6516-9)

SYMBOL

PARAMETER

LIMITS

UNITS

TEST CONDITIONS

MIN

MAX

ICCSB

Standby Supply Current

-

50

µA

IO = 0mA, VI = VCC or GND,

VCC = 5.5V, HM-6516B-9

-100

µA

IO = 0mA, VI = VCC or GND,

HM-6516-9

ICCOP

Operating Supply Current (Note 1)

-

10

mA

f = 1MHz, IO = 0mA, G = VCC, VCC =

5.5V, VI = VCC or GND

ICCDR

Data Retention Supply Current

-

25

µAVCC = 2.0V, IO = 0mA, VI = VCC or

GND, E = VCC, HM-6516B-9

-50

µAVCC = 2.0V, IO = 0mA, VI = VCC or

GND, E = VCC, HM-6516-9

VCCDR

Data Retention Supply Voltage

2.0

-

V

II

Input Leakage Current

-1.0

+1.0

µAVI = VCC or GND, VCC = 5.5V

IIOZ

Input/Output Leakage Current

-1.0

+1.0

µA

VIO = VCC or GND, VCC = 5.5V

VIL

Input Low Voltage

-0.3

0.8

V

VCC = 4.5V

VIH

Input High Voltage

2.4

VCC +0.3

V

VCC = 5.5V

VOL

Output Low Voltage

-

0.4

V

IO = 3.2mA, VCC = 4.5V

VOH1

Output High Voltage

2.4

-

V

IO = -1.0mA, VCC = 4.5V

VOH2

Output High Voltage (Note 2)

VCC -0.4

-

V

IO = -100

µA, VCC = 4.5V

Capacitance TA = +25oC

SYMBOL

PARAMETER

MAX

UNITS

TEST CONDITIONS

CI

Input Capacitance (Note 2)

8

pF

f = 1MHz, All measurements are

referenced to device GND

CIO

Input/Output Capacitance (Note 2)

10

pF

NOTES:

1. Typical derating 5mA/MHz increase in ICCOP.

2. Tested at initial design and after major design changes.

HM-6516