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2SC5435 Arkusz danych(PDF) 7 Page - Renesas Technology Corp

Numer części 2SC5435
Szczegółowy opis  NPN SILICON RF TWIN TRANSISTOR
PDF  12 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5435 Arkusz danych(HTML) 7 Page - Renesas Technology Corp

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Q1
Q2
VCE = 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 3 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Remark The graphs indicate nominal characteristics.
Data Sheet PU10332EJ02V0DS
5
µPA862TS



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