BST39 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BST39; BST40

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 300 V

−

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

IC = 20 mA; VCE =10V

−

VCEsat

collector-emitter saturation voltage IC = 50 mA; IB =4mA

−

500

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2pF

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz 70

−

MHz

BST39 Arkusz danych(PDF) 3 Page - NXP Semiconductors

BST39 Arkusz danych(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Arkusz danych Pobierz

Link URL