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BST82 Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części BST82
Szczegółowy opis  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BST82 Arkusz danych(HTML) 3 Page - NXP Semiconductors

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April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST82
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistors mounted on a ceramic substrate of 7 mm x 5 mm x 0.7 mm.
Drain-source voltage
VDS
max.
80 V
Drain-source voltage (non-repetitive peak; tp ≤ 2 ms)
VDS(SM)
max.
100 V
Gate-source voltage (open drain)
±V
GSO
max.
20 V
Drain current (DC)
ID
max.
175 mA
Drain current (peak)
IDM
max.
600 mA
Total power dissipation up to Tamb = 25 °C (note 1)
Ptot
max.
300 mW
Storage temperature range
Tstg
−65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
430 K/W



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