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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXFN130N30 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN130N30 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXFN130N30 FEATURES · Drain Current : ID=130A@ TC=25℃ · Drain Source Voltage : VDSS= 300V(Min) · Static Drain-Source On-Resistance : RDS(on) = 18mΩ(TYP) @ VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 130 A IDM Drain Current-Single Pulsed 520 A PD Total Dissipation @TC=25℃ 700 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(J-c) Junction-to-case thermal resistance 0.18 ℃ /W |
Podobny numer części - IXFN130N30 |
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Podobny opis - IXFN130N30 |
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