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BU2522DF Arkusz danych(PDF) 3 Page - NXP Semiconductors

Numer części BU2522DF
Szczegółowy opis  Silicon Diffused Power Transistor
PDF  7 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2522DF Arkusz danych(HTML) 3 Page - NXP Semiconductors

  BU2522DF Datasheet HTML 1Page - NXP Semiconductors BU2522DF Datasheet HTML 2Page - NXP Semiconductors BU2522DF Datasheet HTML 3Page - NXP Semiconductors BU2522DF Datasheet HTML 4Page - NXP Semiconductors BU2522DF Datasheet HTML 5Page - NXP Semiconductors BU2522DF Datasheet HTML 6Page - NXP Semiconductors BU2522DF Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522DF
Fig.1. Switching times waveforms (64 kHz).
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. Test Circuit RBSOA. V
CC = 140 V; -VBB = 4 V;
L
C = 100 - 400 µH; VCL ≤ 1500 V; LB = 3 µH;
C
FB = 1 - 2.2 nF; IB(end) = 1.6 - 2 A
Fig.5. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.6. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
V
ICsat
I
end
16 us
6.5 us
5 us
t
t
t
TRANSISTOR
DIODE
B
I C
I B
CE
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
10
IC / A
hFE
100
10
1
100
1
Tj = 25 C
Tj = 125 C
5 V
1 V
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
0.1
1
10
IC / A
VBESAT / V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
September 1997
3
Rev 1.200



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