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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BU4506AX Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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BU4506AX Arkusz danych(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page  Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AX Fig.3. Switching times waveforms (16 kHz). Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. High and low DC current gain. Fig.7. High and low DC current gain. Fig.8. Typical collector-emitter saturation voltage. IC IB VCE ICsat IB1 64us 26us 20us t t t TRANSISTOR DIODE IB2 0.01 0.1 1 10 1 10 100 hFE IC / A VCE = 1 V Ths = 25 C Ths = 85 C ICsat 90 % 10 % tf ts IB1 IC IB t t - IB2 0.01 0.1 1 10 1 10 100 VCE = 5 V hFE IC / A Ths = 25 C Ths = 85 C + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 1 10 0 0.2 0.4 0.6 0.8 1 IC / A VCESAT / V Ths = 25 C Ths = 85 C July 1999 3 Rev 1.000 |
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