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STTH212S Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STTH212S
Szczegółowy opis  High voltage ultrafast diode
PDF  9 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH212S Arkusz danych(HTML) 3 Page - STMicroelectronics

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STTH212
1 Electrical characteristics
3/9
Table 4.
Dynamic Electrical Characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
trr
Reverse recovery
time
Tj = 25°C
IF = 1A dIF/dt = -100 A/µs VR =30V
75
ns
tfr
Forward recovery
time
Tj = 25°C
IF = 2A
dIF/dt = 50 A/µs
VFR = 1.1 x VFmax
500
ns
VFP
Forward recovery
voltage
30
V
Figure 1.
Conduction losses versus average
forward current
Figure 2.
Forward voltage drop versus
forward current
Figure 3.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
LLeads = 10mm)
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (Epoxy
printed circuit board FR4,
SCU =1cm
2)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
T
δ=tp/T
tp
I
(A)
F(AV)
P(W)
δ = 0.05
δ = 0.1 δ = 0.2
δ = 1
δ = 0.5
0
5
10
15
20
25
30
35
40
45
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
(A)
FM
V
(V)
FM
T =125°C
(typical values)
j
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
DO-201AD
Lleads=10mm
Zth(j-a)/Rth(j-a)
tp(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
SMB
SCu=1cm²
Zth(j-a)/Rth(j-a)
tp(s)



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