BAS70-07S datasheet(3/4 Pages) STMICROELECTRONICS

3 / 4 page

BAS70-07S / BAS70-08S

3/4

1.E-01

1.E+00

1.E+01

1.E+02

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VFM(V)

Tj=150°C

Tj=125°C

Tj=85°C

Tj=25°C

Tj=-40°C

IFM(mA)

Fig. 1: Forward voltage drop versus forward

current (typical values).

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1020

3040

5060

IR(µA)

VR(V)

Tj = 150°C

Tj = 25°C

Tj = 85°C

Fig. 2: Reverse leakage current versus reverse

voltage applied (typical values).

100

1000

0.1

1.0

10.0

Rf( )

Ω

IF(mA)

F = 10kHz

Tj = 25°C

Fig. 3: Differential forward resistance versus

forward current (typical values).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

102030

40506070

C(pF)

VR(V)

F = 1MHz

Vosc = 30mV

Tj = 25°C

RMS

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values).

10.0

100.0

1000.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

Zth(j-a)(°C/W)

tp(s)

Fig. 5: Variation of thermal impedance junction to

ambient versus pulse duration (printed circuit

board, epoxy FR4).

300

350

400

450

500

550

600

Rth(j-a)

S(mm²)

Fig. 6: Thermal resistance junction to ambient

versus copper surface under each lead (printed

circuit board, epoxy FR4).

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