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B1D08065F Arkusz danych(PDF) 1 Page - BASIC SEMICONDUCTOR |
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B1D08065F Arkusz danych(HTML) 1 Page - BASIC SEMICONDUCTOR |
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1 / 7 page ![]() SiC Schottky Diode V RRM 650 V 8 A 24 nC I F (TC=155°C) Q C Package: TO-263-2 Product Summary Features Benefits Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on V F Excellent surge current capability Low capacitive charge Essentially no switching losses System efficiency improvement over Si diodes Increased power density Enabling higher switching frequency Switch mode power supplies (SMPS) Uninterruptible power supplies Pin1,3 and backside - Cathode Pin2 - Anode Motor drivers Power factor correction Reduction of heat sink requirements System cost savings due to smaller magnetics Reduced EMI Applications Package Pin Definitions Package Parameters 1 / 7 www.basicsemi.com Part Number Marking Package B1D08065F B1D08065F TO-263-2 2 1 3,backside Electrical Connection B1D08065F 2 3 1 Rev. 1.2 |
Podobny numer części - B1D08065F |
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Podobny opis - B1D08065F |
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