Nexperia

PMPB09R5VP

12 V, P-channel Trench MOSFET

aaa-033039

VDS (V)

-10-1

-102

-10

-1

-10

-1

-102

ID

(A)

-10-1

tp = 100 ms

tp = 10 ms

tp = 1 ms

tp = 100 µs

tp = 10 µs

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

DC; Tsp = 25 °C

Limit RDSon = VDS/ID

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB09R5VP

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Product data sheet

10 February 2021

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