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SST12LP14-QVC Arkusz danych(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST12LP14-QVC Arkusz danych(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 12 page ![]() ©2005 SST Communications Corp. S71279-00-000 1/05 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Preliminary Specifications FEATURES: • High Gain: – Typically 30 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C • High linear output power: – >26.5 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 23 dBm – Added EVM ~4% up to 20 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 24 dBm • High power-added efficiency/Low operating current for both 802.11g/b applications –~22% @ POUT = 22 dBm for 802.11g –~26% @ POUT = 23.5 dBm for 802.11b • Built-in Ultra-low IREF power-up/down control –IREF <4 mA • Low idle current –~60 mA ICQ • High-speed power-up/down – Turn on/off time (10%~90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • High temperature stability – ~1 dB gain/power variation between 0°C to +80°C – ~1 dB detector variation over 0°C to +80°C • Low shut-down current (< 0.1 µA) • On-chip power detection • 25 dB dynamic range on-chip power detection • Simple input/output matching • Packages available – 16-contact VQFN (3mm x 3mm) – Non-Pb (lead-free) packages available APPLICATIONS: • WLAN (IEEE 802.11g/b) •Home RF • Cordless phones • 2.4 GHz ISM wireless equipment PRODUCT DESCRIPTION The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/GaAs HBT technology. The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb power-added effi- ciency while operating over the 2.4~2.5 GHz frequency band. It typically provides 30 dB gain with 22% power- added efficiency @ POUT = 22 dBm for 802.11g and 27% power-added efficiency @ POUT = 24 dBm for 802.11b. The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80°C), single-ended/differential power detectors which lower users’ cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultra- low reference current (total IREF <4 mA) makes the SST12LP14 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP14 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP14 is offered in 16-contact VQFN package. See Figure 1 for pin assignments and Table 1 for pin descriptions. 2.4 GHz Power Amplifier SST12LP14 SST12LP142.4 GHz Power Amplifier |
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