TSH690 datasheet(4/14 Pages) STMICROELECTRONICS

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TSH690

4/14

ELECTRICAL CHARACTERISTICS AT 450 MHz

Tamb = 25°C, V

CC & Vbias = +2.7V, ZL = 50Ω, f = 450 MHz (unless otherwise specified)

ELECTRICAL CHARACTERISTICS AT 900 MHz

Tamb = 25°C, V

CC & Vbias = +3V, ZL = 50Ω, f = 900 MHz (unless otherwise specified)

Parameter1)

1. All min. and max. parameters of this table are garanteed by correlation with 900 MHz tests.

Min.

Typ.

Max.

Unit

Power gain S21 (Pin = -20dBm)

Output Power 1dB Compression

dBm

3rd Order Intercept Point (f = 430MHz)

dBm

Reverse Isolation S12 (f = 400MHz)

-46

Input Return Loss S11

-10

-15

Noise Figure

4.5

Parameter1)

1. All min. and max. parameters of this table are garanteed by test.

Min.

Typ.

Max.

Unit

Power gain S21 (Pin = -20dBm)

Output Power at 1dB compression point

+12

+14.3

dBm

Output power, Pin = -7 dBm

+10

+11.7

dBm

3rd Order Intercept Point

+25

dBm

Reverse Isolation S12

-35

Input Return Loss S11

-14

Output Return Loss S22

-4.5

Noise figure

5.4

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