STN888 datasheet(3/9 Pages) STMICROELECTRONICS

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STN888

2 Electrical Characteristics

3/9

Electrical Characteristics

(TCASE = 25°C; unless otherwise specified)

Table 3.

Electrical Characteristics

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off Current

(IE = 0)

VCB = -30V

____TC = 100°C

-10

-100

μA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -6V

-10

μA

V(BR)CEO

Note: 1

Collector-Emitter

Breakdown Voltage (IB = 0)

IC = -10mA

-30

V(BR)CBO

Collector-Base

Breakdown Voltage (IE = 0)

IC = -100μA

-45

V(BR)EBO

Emitter-Base

Breakdown Voltage (IC = 0)

IE = -100μA

-6

VCE(sat)

Note: 1

Collector-Emitter Saturation

Voltage

IC = -500mA_____ IB = -5mA

IC = -2A_____

IB = -50mA

IC = -5A_____

IB = -250mA

IC = -6A_

____ IB = -250mA

IC = -8A _____

IB = -400mA

IC = -10A ___

__ IB = -500mA

-0.7

-1.0

-1.2

-0.15

-0.35

-0.70

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage

IC = -2A ____

IB = -50mA

IC = -6A ____

IB = -250mA

-1.2

-1.1

hFE

Note: 1

DC Current Gain

IC = -10mA

VCE = -1 V 120

200

IC = -500mA

VCE = -1 V 100

200

300

IC = -5 A

VCE = -1 V 70

100

IC = -5 A VCE = -1 V tj = 100°C

100

IC = -8 A

VCE = -1 V

IC = -10 A

VCE = -1 V

INDUCTIVE LOAD

Delay Time

Rise Time

Storage Time

Fall Time

IC = -3A ____ _

VCC = -20V

IB1 = -IB2 =-60mA

(see Figure 7)

180

160

250

220

210

300

100

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