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P75NS04Z Arkusz danych(PDF) 5 Page - STMicroelectronics |
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P75NS04Z Arkusz danych(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STP75NS04Z Electrical characteristics 5/12 Table 6. Switching on/off Symbol Parameter Test condictions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 20V, ID = 40A RG= 4.7 Ω, VGS= 10V, (see Figure 12) 16 248 ns ns td(off) tf Turn-off delay time Fall time VDD= 20V, ID = 40A RG= 4.7 Ω, VGS= 10V, (see Figure 12) 53 85 ns ns Table 7. Source drain diode Symbol Parameter Test condictions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 80 320 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on Voltage ISD=80A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, di/dt = 100A/µs, VDD=30V, Tj=150°C (see Figure 17) 53 91 3.4 ns nC A |
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