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15

14

13

12

11

5

4

3

2

1

C1P

PGND

C1N

NC

PVSS

INR

SDR

INL

NC

OUTR

NC − No internal connection

15

14

13

12

11

5

4

3

2

1

C1P

PGND

C1N

NC

PVSS

INR

SDR

INL

NC

OUTR

NC − No internal connection

TPA4411MRTJ

TPA4411RTJ

INR

INL

PGND

OUTL

PVSS

SVSS

C1N

PVDD

SGND

A1

B1

C1

D1

A2

A3

A4

SDL

SVDD

C1P

SDR

NC-Nointernalconnection

NC

NC

OUTR

TPA4411YZH

TPA4411

TPA4411M

SLOS430C – AUGUST 2004 – REVISED DECEMBER 2006

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

RTJ (QFN) PACKAGE

(TOP VIEW)

YZH (WCSP) PACKAGE

(TOP VIEW)

2