PUSB3BB4

Extremely low capacitance bidirectional ESD protection

diode array

10 August 2023

Short data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode array, part

of the TrEOS protection family. This device is housed in a DFN2510A-10 (SOT1176) leadless ultra

small Surface-Mounted Device (SMD) plastic package, designed to protect four signal lines from

the damage caused by ESD and other transients.

2. Features and benefits

• Bidirectional ESD protection for four signal lines

• VRWM = 3.3 V device

• Extremely low clamping voltage to protect sensitive I/Os

• Extremely low clamping voltage: 5.4 V for 6.5 A 8/20 µs surge

• IEC 61000-4-4 robust up to 40 A into a 50 Ohm termination (2 kV)

• IEC 61000-4-5 (surge): IPP = 8.3 A peak pulse (average measured)

• Extremely low diode capacitance Cd = 0.17 pF typical at 1.5 V

• ESD protection up to ±15 kV according to IEC 61000-4-2

• Leadless ultra small DFN2510A-10 (SOT1176) surface mount package

3. Applications

• Cellular handsets and accessories

• Portable electronics

• Communication systems

• Computers and peripherals

• USB3.2 and HDMI2.1 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

-3.3

-

3.3

V

Cd

diode capacitance

f = 1 MHz; VR = 1.5 V; Tamb = 25 °C

[1]

-

0.17

0.2

pF

[1] Measured on pin 1