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2SC5027E-R-TA3-T Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części 2SC5027E-R-TA3-T
Szczegółowy opis  HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
PDF  4 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SC5027E-R-TA3-T Arkusz danych(HTML) 2 Page - Unisonic Technologies

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2SC5027E
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-030,B
ABSOLUATE MAXIUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
750
V
Collector-Emitter Voltage
VCEO
700
V
Collector-Emitter Voltage
VEBO
7
V
Peak Collector Current
IC
3
A
Collector Current (Pulse)
ICP
10
A
Base Current
IB
1.5
A
Power Dissipation
PD
50
W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
C= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=1mA, IE=0
750
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=5mA, IB=0
700
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
7
V
Collector-Emitter sustaining Voltage
VCEO(SUS)
IC=1.5A, IB1= -IB2=0.3A
L=2mH, Clamped
700
V
Collector Cut-off Current
ICBO
VCB=750V, IE=0
10
μA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
10
μA
hFE1
VCE=5V, IC=0.2A
10
40
DC Current Gain
hFE 2
VCE=5V, IC=1A
8
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=1.5A, IB=0.3A
2
V
Base-Emitter Saturation Voltage
VBE (SAT)
IC=1.5A, IB=0.3A
1.5
V
Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
60
pF
Current Gain Bandwidth Product
fT
VCE=10V, IC=0.2A
15
MHz
Turn ON Time
tON
0.5
μs
Storage Time
tS
3
μs
Fall Time
tF
VCC=400V
IC=5IB1= -2.5IB2=2A
RL=200Ω
0.3
μs
CLASSIFICATION of hFE1
CLASSIFICATION
N
R
O
RANGE
10 ~ 20
15 ~ 30
20 ~ 40



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