BUT12 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BUT12; BUT12A

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a TO-220AB package.

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

DESCRIPTION

base

collector; connected to

mounting base

emitter

andbook, halfpage

MBK106

12 3

Fig.1 Simplified outline (TO-220AB) and symbol.

handbook, halfpage

MBB008

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

BUT12

850

BUT12A

1000

VCEO

collector-emitter voltage

open base

BUT12

400

BUT12A

450

VCEsat

collector-emitter saturation voltage

see Fig.8

1.5

ICsat

collector saturation current

BUT12

BUT12A

collector current (DC)

see Figs 3 and 4

ICM

collector current (peak value)

see Fig. 4

Ptot

total power dissipation

Tmb ≤ 25 °C; see Fig.2

125

fall time

resistive load;

see Figs 12 and 13

0.8

µs

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-mb

thermal resistance from junction to mounting base

K/W

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