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BYV95 Arkusz danych(PDF) 2 Page - NXP Semiconductors

Numer części BYV95
Szczegółowy opis  Fast soft-recovery controlled avalanche rectifiers
PDF  8 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYV95 Arkusz danych(HTML) 2 Page - NXP Semiconductors

  BYV95 Datasheet HTML 1Page - NXP Semiconductors BYV95 Datasheet HTML 2Page - NXP Semiconductors BYV95 Datasheet HTML 3Page - NXP Semiconductors BYV95 Datasheet HTML 4Page - NXP Semiconductors BYV95 Datasheet HTML 5Page - NXP Semiconductors BYV95 Datasheet HTML 6Page - NXP Semiconductors BYV95 Datasheet HTML 7Page - NXP Semiconductors BYV95 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Jun 07
2
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV95 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy
absorption capability
• Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka



LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYV95A
200
V
BYV95B
400
V
BYV95C
600
V
VR
continuous reverse voltage
BYV95A
200
V
BYV95B
400
V
BYV95C
600
V
IF(AV)
average forward current
Ttp =65 °C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
1.5
A
Tamb =65 °C; PCB mounting (see
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
0.8
A
IFRM
repetitive peak forward current
Ttp =65 °C; see Fig. 4
17
A
Tamb =65 °C; see Fig. 5
9A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
35
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig. 7
−65
+175
°C



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