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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SY10E175JC Arkusz danych(PDF) 3 Page - Micrel Semiconductor |
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SY10E175JC Arkusz danych(HTML) 3 Page - Micrel Semiconductor |
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3 / 4 page  3 SY10E175 SY100E175 Micrel, Inc. M9999-032006 hbwhelp@micrel.com or (408) 955-1690 Note: 1. Within-device skew is defined as identical transitions on similar paths through a device. TRUTH TABLE D LEN MR Q ODDPAR H L L H H if odd no. of Dn HIGH LLLL H if odd no. of Dn HIGH XH L Q0 Q0 XX H L L TA = 0 °CTA = +25°CTA = +85°C Symbol Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit Condition tPD Propagation Delay to Output ps — D to Q 450 600 800 450 600 800 450 600 800 D to ODDPAR 850 1150 1450 850 1150 1450 850 1150 1450 LEN to Q 525 700 900 525 700 900 525 700 900 LEN to ODDPAR 525 700 900 525 700 900 525 700 900 MR to Q (tPHL) 525 700 900 525 700 900 525 700 900 MR to ODDPAR (tPHL) 525 700 900 525 700 900 525 700 900 tS Set-up Time ps — D (Q) 275 100 — 275 —— 275 —— D (ODDPAR) 900 700 — 900 —— 900 —— tH Hold Time ps — D (Q) 175 –100 — 175 —— 175 —— D (ODDPAR) –300 –700 —–300 —— –300 —— tRR Reset Recovery Time 850 600 — 850 600 — 850 600 — ps — tskew Within-Device Skew ps 1 LEN, MR — 75 —— 75 —— 75 — D to Q — 75 —— 75 —— 75 — D to ODDPAR — 200 —— 200 —— 200 — tr Rise/Fall Times 300 500 800 300 500 800 300 500 800 ps — tf 20–80% AC ELECTRICAL CHARACTERISTICS VEE = VEE (Min.) to VEE (Max.); VCC = VCCO = GND TA = 0 °CTA = +25°CTA = +85°C Symbol Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit Condition IIH Input HIGH Current —— 150 —— 150 —— 150 µA — IEE Power Supply Current mA — 10E — 110 132 — 110 132 — 110 132 100E — 110 132 — 110 132 — 127 152 DC ELECTRICAL CHARACTERISTICS VEE = VEE (Min.) to VEE (Max.); VCC = VCCO = GND |
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