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ISCF8006 Arkusz danych(PDF) 3 Page - Inchange Semiconductor Company Limited |
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ISCF8006 Arkusz danych(HTML) 3 Page - Inchange Semiconductor Company Limited |
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3 / 6 page ![]() ISCF8006 eq C3M0060065K SiC N-Channel MOSFET www.iscsemi.com 3 SOURCE-DRAIN BODY DIODE CHARACTERISTICS Drain - Source Body Diode Characteristics VSD Diode Forward Voltage ISD= 6.6A; VGS= -4V -- 5.1 -- V trr Reverse Recovery Time VGS = -4 V, ISD = 13.2 A, VR = 400V dif/dt=1000 A/µs, -- 27 -- ns Qrr Reverse Recovery Charge -- 45 -- uC Irrm Peak Reverse Recovery Current -- 5 -- A CUICUIT DIAGRAM |
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