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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ISCF8010 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8010 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  ISCF8010 eq MSC017SMA120 SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 22mΩ@VGS=20V Tj=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Solar Inverters · Switch Mode Power Supplies · DC-DC Converters · Motor drives ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -10/+23 V ID Drain Current-Continuous 88 A Drain Current-Continuous@Tc=100℃ 62 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 278 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~150 ℃ |
Podobny numer części - ISCF8010 |
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Podobny opis - ISCF8010 |
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