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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SG10SC4M Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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SG10SC4M Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  ISS5006 eq SG10SC4M Schottky Diode www.iscsemi.com 1 FEATURES ·Extremely low switching losses ·Low Irm values ·Improved thermal circuit operation ·High reliability circuit operation ·Low voltage peaks for reduced protection circuits ·Low noise switching Applications ·Rectifiers in switch mode power supplies ·Free wheeling diode in low voltage converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 40 V IF(AV) AverageRectifiedForwardCurrent @TC=125℃ 10 A IFSM Nonrepetitive Peak Surge Current T=10ms;(60Hz),sine;VR=0V 150 A TJ Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.0 ℃ /W |
Podobny numer części - SG10SC4M |
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Podobny opis - SG10SC4M |
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