ROHS

Revision March 1,2022

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ROHS

Specifications are subject to change without notice.

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2/8

UN0406N6R5-S08

N-Channel Enhancement Mode MOSFET

Absolute Maximum Ratings TC = 25℃ unless otherwise specified

Parameter

Symbol

Maximum

Units

Drain to Source Voltage

Pulsed Drain Current 1)

Gate-Source Voltage

Single Pulsed Avalanche Energy 2)

Junction and Storage Temperature Range

VDs

lDM

VGS

EAS

Tstg,TJ

40

16.1

10

61

±20

4.17

20

-55~150

V

A

V

mJ

℃

Continuous Drain Current

A

ID

@TC=25℃

@TC=100℃

PD

Power Dissipation

W

Thermal Characteristics

Notes:

1) Single pulse width limited by junction temperature .

2) Limited by TJ(MAX), Starting at TJ=25℃, Rg=25Ω, L=0.5mH.

3) Design parameters,Guaranteed by design, not subject to production.

Parameter

Symbol

Max

Units

Junction-to-Lead Thermal Resistance

Steady State

RθJL

30

Typ

--

℃

/W