Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

SPF-2000 Arkusz danych(PDF) 2 Page - SIRENZA MICRODEVICES

Numer części SPF-2000
Szczegółowy opis  Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  SIRENZA [SIRENZA MICRODEVICES]
Strona internetowa  
Logo SIRENZA - SIRENZA MICRODEVICES

SPF-2000 Arkusz danych(HTML) 2 Page - SIRENZA MICRODEVICES

  SPF-2000 Datasheet HTML 1Page - SIRENZA MICRODEVICES SPF-2000 Datasheet HTML 2Page - SIRENZA MICRODEVICES SPF-2000 Datasheet HTML 3Page - SIRENZA MICRODEVICES  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
http://www.sirenza.com
Phone: (800) SMI-MMIC
2
EDS-103295 Rev A
303 South Technology Court, Broomfield, CO 80021
SPF-2000 Low Noise High Linearity FET
Preliminary
Operation of this device beyond any one of these
parameters may cause permanent damage.
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
P
DC - P
OUT < (TJ - TL) / RTH
where:
P
DC = I
DS * VDS (W)
P
OUT = RF Output Power (W)
T
J = Junction Temperature (°C)
T
L = Lead Temperature (pin 4) (°C)
R
TH = Thermal Resistance (°C/W)
Absolute Maximum Ratings
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Se
u
l
a
Vt
i
n
U
n
i
a
r
Dt
n
e
r
r
u
CI
S
D
I
S
S
D
A
m
e
t
a
G
d
r
a
w
r
o
Ft
n
e
r
r
u
CI
F
S
G
3
.
0A
m
t
n
e
r
r
u
C
e
t
a
G
e
s
r
e
v
e
RI
R
S
G
3
.
0A
m
e
c
r
u
o
S
-
o
t
-
n
i
a
r
De
g
a
tl
o
VV
S
D
7
+V
n
i
a
r
D
-
o
t
-
e
t
a
Ge
g
a
tl
o
VV
D
G
8
-V
e
c
r
u
o
S
-
o
t
-
e
t
a
Ge
g
a
tl
o
VV
S
G
0
>
r
o
5
-
<V
r
e
w
o
P
t
u
p
n
I
F
RP
N
I
0
0
1W
m
e
r
u
t
a
r
e
p
m
e
T
g
n
it
a
r
e
p
OT
P
O
5
8
+
o
t
0
4
-C
°
e
g
n
a
R
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
ST
r
o
t
s
0
5
1
+
o
t
0
4
-C
°
n
o
it
a
p
i
s
s
i
D
r
e
w
o
PP
S
I
DS
0
0
6W
m
e
r
u
t
a
r
e
p
m
e
T
l
e
n
n
a
h
CT
J
+0
5
1C
°
Assembly Instructions:
The recommended die attach is conductive epoxy or AuSn (80/20) solder with limited exposure to
temperatures at or above 300C. The preferred wirebond method is thermo-compression wedge bond
using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be
used.
Design Data:
Complete design data including S-parameters, noise parameters, and large signal model are
available upon request by contacting applications support at baredie-apps@sirenza.com



Html Pages

1 2 3


Arkusz danych Pobierz

Go To PDF Page


Link URL



Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Link do karty katalogowej    |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com