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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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10ETS16F Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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10ETS16F Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Input Rectifier Diode 10ETS16F www.iscsemi.com 1 FEATURES · Fast soft recovery · Low forward voltage,high efficiency APPLICATIONS · Input rectification · Switches and output rectifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 1600 V IF(AV) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current (Surge applied at rated load conditions half- wave, single phase) 200 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃ /W |
Podobny numer części - 10ETS16F |
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Podobny opis - 10ETS16F |
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