NJ01 datasheet(1/2 Pages) INTERFET

Numer części	NJ01

Szczegółowy opis	Silicon Junction Field-Effect Transistor

PDF	2 Pages

Scroll/Zoom	100%

Producent	INTERFET [InterFET Corporation]

Strona internetowa	http://www.interfet.com

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1 / 2 page

F-2

01/99

NJ01 Process

Silicon Junction Field-Effect Transistor

¥ Low-Current

¥ Low Gate Leakage Current

¥ High Input Impedance

Absolute maximum ratings at TA = 25¡C

Gate Current, Ig

10 mA

Operating Junction Temperature, Tj

+150°C

Storage Temperature, Ts

– 65°C to +175°C

Devices in this Databook based on the NJ01 Process.

Datasheet

2N4117, 2N4117A

2N4118, 2N4118A

2N4119, 2N4119A

IFN421, IFN422

IFN423, IFN424

IFN425, IFN426

Datasheet

DPAD1, DPAD2

DPAD5, DPAD10

PAD1, PAD2

PAD5

VCR7N

At 25°C free air temperature:

NJ01 Process

Static Electrical Characteristics

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 40

– 50

V

IG = – 1 µA, VDS = ØV

Gate Reverse Current

IGSS

– 0.5

– 10

pA

VGS = – 20V, VDS = ØV

Gate Source Cutoff Voltage

VGS(OFF)

– 0.5

– 6

V

VDS = 10V, ID = 1 µA

Drain Saturation Current (Pulsed)

IDSS

0.03

0.6

mA

VDS = 10V, VGS = ØV

Dynamic Electrical Characteristics

Common Source Forward Transconductance

gfs

175

µS

VDS = 10V, VGS = ØV

f = 1 kHz

Common Source Input Capacitance

Ciss

2pF

VDS = 10V, VGS = ØV

f = 1 MHz

Common Source Reverse Transfer Capacitance

Crss

0.9

pF

VDS = 10V, VGS = ØV

f = 1 MHz

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

G

S-D

Die Size = 0.016" X 0.016"

All Bond Pads = 0.004" Sq.

Substrate is also Gate.

Databook.fxp

1/13/99 2:09 PM

Page F-2

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