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NJ14AL Arkusz danych(PDF) 2 Page - InterFET Corporation |
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NJ14AL Arkusz danych(HTML) 2 Page - InterFET Corporation |
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2 / 2 page ![]() 01/99 F-5 NJ14AL Process Silicon Junction Field-Effect Transistor Temperature (K) Noise as a Function of Temperature Gate Source Voltage in Volts Input Capacitance as a Function of VGS Gate Source Cutoff Voltage in Volts 0 – 1– 2– 3– 4– 5– 6 Drain Saturation Current as a Function of VGS(OFF) 25 20 15 10 5 0 – 1– 2– 3– 4– 5– 6 10 100 1K 10K 100K 10 8 6 4 2 6 4 2 Frequency in Hz Noise as a Function of Frequency Gate Source Cutoff Voltage in Volts Gfs as a Function of VGS(OFF) 100 150 200 250 300 350 2 4 6 8 f = 1 kHz f = 100 kHz VDG = 4 V ID = 5 mA 0 – 4 – 8 – 12 – 16 3.5 3.0 2.5 2.0 1.5 VDS = Ø V VDS = 5 V Drain to Source Voltage in Volts 0 5 10 15 20 Drain Current as a Function of VDS 10 8 6 4 2 Vgs = –2.0 V Vgs = –1.5 V Vgs = –1.0 V Vgs = –0.5 V Vgs = Ø V VGS(OFF) = Ð2.2 V Databook.fxp 1/13/99 2:09 PM Page F-5 |
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