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PJ99 Arkusz danych(PDF) 1 Page - InterFET Corporation

Numer części PJ99
Szczegółowy opis  Silicon Junction Field-Effect Transistor
PDF  2 Pages
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Producent  INTERFET [InterFET Corporation]
Strona internetowa  http://www.interfet.com
Logo INTERFET - InterFET Corporation

PJ99 Arkusz danych(HTML) 1 Page - InterFET Corporation

  PJ99 Datasheet HTML 1Page - InterFET Corporation PJ99 Datasheet HTML 2Page - InterFET Corporation  
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F-30
01/99
PJ99 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ Analog Switch
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the PJ99 Process.
Datasheet
2N3993, 2N3993A
2N3994, 2N3994A
2N5114, 2N5115
2N5116
2SJ44
IFN5114, IFN5115
IFN5116
Datasheet
IFP44
J174, J175
J176, J177
P1086, P1087
VCR3P
At 25°C free air temperature:
PJ99 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
30
40
V
IG = 1 µA, VDS = ØV
Reverse Gate Leakage Current
IGSS
0.5
1
nA
VGS = 20V, VDS = ØV
Drain Saturation Current (Pulsed)
IDSS
– 5
– 60
mA
VDS = – 15V, VGS = ØV
Gate Source Cutoff Voltage
VGS(OFF)
18
V
VDS = – 15V, ID = 1 nA
Dynamic Electrical Characteristics
Drain Source ON Resistance
rds(on)
75
ID = 1 mA, VGS = ØV
f = 1 kHz
Forward Transconductance
gfs
15
mS
VDS = – 15V, VGS = ØV
f = 1 kHz
Input Capacitance
Ciss
18
pF
VDS = 15V, VGS = ØV
f = 1 MHz
Feedback Capacitance
Ciss
4.5
pF
VDS = ØV, VGS = 10V
f = 1 MHz
Equivalent Noise Voltage
¯eN
8
nV/
√HZ V
DS = – 10 V, VGS = Ø V
f = 1 kHz
Turn On Delay Time
td(on)
5ns
Rise Time
tr
10
ns
VDD = – 10V, ID(ON) = – 15 mA
Turn Off Delay Time
td(off)
6ns
RL = 580 Ω, VGS(ON) = ØV
Fall Time
tf
5ns
VGS(OFF) = 12V
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
G
G
S-D
S-D
Die Size = 0.021" X 0.021"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Databook.fxp
1/13/99 2:09 PM
Page F-30


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