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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ISCF8013 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8013 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  ISCF8013 eq C3M0065100J SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High Blocking Voltage with Low On-Resistance · RDS(ON)= 78mΩ）@VGS=15V Tc=25℃ · High Speed Switching with Low Capacitance · Easy to Parallel and Simple to Drive APPLICATIONS · Renewable energy · EV battery chargers · High voltage DC/DC converters · Switch Mode Power Supplies Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGSS Gate-Source Opetation Voltage -8/+19 V ID Drain Current-Continuous 35 A Drain Current-Continuous@Tc=100℃ 22.5 A IDM Drain Current-Single Pluse 90 A PD Total Dissipation @TC=25℃ 114 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Podobny numer części - ISCF8013 |
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Podobny opis - ISCF8013 |
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