UT3N06L-AE3-R datasheet(4/9 Pages) VBSEMI

Numer części	UT3N06L-AE3-R

Szczegółowy opis	N-Channel 60-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Producent	VBSEMI [VBsemi Electronics Co.,Ltd]

Strona internetowa	www.VBsemi.com

Logo

4 / 9 page

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

0.1

1.2

1.5

1.8

2.1

2.4

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.1

0.2

0.35

345

910

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = 2 .5 A

Time (s)

600

0.1

0.01

100

TA = 25 °C

Single Pulse

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

0.1

TA = 25 °C

Single Pulse

1ms

10 ms

100 ms

0.01

1s,10s

BVDSS Limited

100

100 µs

Limited byRDS(on)*

UT3N06L-AE3-R

www.VBsemi.com

服务热线：400-655-8788

UT3N06L-AE3-R Arkusz danych(PDF) 4 Page - VBsemi Electronics Co.,Ltd

UT3N06L-AE3-R Arkusz danych(HTML) 4 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9

Arkusz danych Pobierz

Link URL