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UT3413G-AE3-R Arkusz danych(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Numer części UT3413G-AE3-R
Szczegółowy opis  P-Channel 20-V (D-S) MOSFET
PDF  9 Pages
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Producent  VBSEMI [VBsemi Electronics Co.,Ltd]
Strona internetowa  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT3413G-AE3-R Arkusz danych(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
0.5
1
1.5
2
2.5
3
025
50
75
100
125
150
T
C - Case Temperature (°C)
Power, Junction-to-Ambient
0
0.2
0.4
0.6
0.8
1
025
50
75
100
125
150
T
A - Ambient Temperature (°C)
UT3413G-AE3-R
www.VBsemi.com
5
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