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AM29DL16XDB120PCF Arkusz danych(PDF) 41 Page - Advanced Micro Devices

Numer części AM29DL16XDB120PCF
Szczegółowy opis  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
PDF  57 Pages
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Producent  AMD [Advanced Micro Devices]
Strona internetowa  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL16XDB120PCF Arkusz danych(HTML) 41 Page - Advanced Micro Devices

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December 1, 2006 21533E5
Am29DL16xD
43
D A TA
SH EET
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
70
80
90
120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
80
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit
polling
Min
15151515
ns
tWLAX
tAH
Address Hold Time
Min
45454550
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35354550
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
20
20
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
30
35
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
30
30
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
5
µs
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns



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