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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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ISCF8022 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8022 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page  ISCF8022 eq IMZA120R030M1H SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · VDSS = 1200 V at TJ= 25°C · High Blocking Voltage with Low On-Resistance · RDS(ON)= 30mΩ（TYP.）@VGS=18V ;TJ= 25℃ · Very low switching losses · Easy to Parallel and Simple to Drive APPLICATIONS · General purpose drives (GPD) · EV-Charging · Online UPS/Industrial UPS · String inverters · Solar power optimizer Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGS Gate-Source voltage -4/+18 V VGSmax Gate-Source voltage（Absolute maximum values） -8/+22 V ID Drain Current-Continuous 70 A Drain Current-Continuous@Tc=100℃ 49 A IDM Drain Current-Single Pluse 147 A PD Total Dissipation @TC=25℃ 273 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -40~175 ℃ |
Podobny numer części - ISCF8022 |
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Podobny opis - ISCF8022 |
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