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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IXFN32N120P Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN32N120P Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1068 eq IXFN32N120P N-Channel MOSFET www.iscsemi.com 1 DESCRIPTION · Drain Current -ID= 32A@ TC=25℃ · Drain Source Voltage -VDSS= 1200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.31Ω(Max)@VGS= 10V APPLICATIONS · DC-DC converter · Battery Chargers · High speed power switch ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 1200 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-continuous@ TC=25℃ 32 A IDM Pulse Drain Current 100 A PD Total Dissipation@TC=25℃ 1000 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ D G S S SOT-227 package |
Podobny numer części - IXFN32N120P |
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Podobny opis - IXFN32N120P |
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