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FDFMA2P853 Arkusz danych(PDF) 5 Page - Fairchild Semiconductor |
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FDFMA2P853 Arkusz danych(HTML) 5 Page - Fairchild Semiconductor |
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5 / 7 page ![]() FDFMA2P853 Rev. D (W) 5 Figure 7. 0 1 2 3 4 5 01 23 4 5 Qg, GATE CHARGE (nC) ID = -3.0A VDS = -5V -15V -10V Gate Charge Characteristics Figure 8. 0 100 200 300 400 500 600 700 0 4 8 121620 -V DS, DRAIN TO SOURCE VOLTAGE (V) Ciss Crss Coss f = 1MHz VGS = 0 V Capacitance Characteristics Figure 9. 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) TJ = 25 oC TJ = 125 oC Schottky Diode Forward Voltage Figure 10. 0.000001 0.00001 0.0001 0.001 0.01 0 5 10 15 20 VR, REVERSE VOLTAGE (V) TJ = 25 oC TJ = 125 oC TJ = 85 oC Schottky Diode Reverse Current Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. Typical Characteristics |
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