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PBYR1645 Arkusz danych(PDF) 1 Page - NXP Semiconductors

Numer części PBYR1645
Szczegółowy opis  Rectifier diodes Schottky barrier
PDF  5 Pages
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Producent  PHILIPS [NXP Semiconductors]
Strona internetowa  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PBYR1645 Arkusz danych(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1645 series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
V
R = 40 V/ 45 V
• Reverse surge capability
• High thermal cycling performance
I
F(AV) = 16 A
• Low thermal resistance
V
F ≤ 0.57 V
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope. Intended for use as
output rectifiers in low voltage, high
1
cathode
frequency switched mode power
supplies.
2
anode
The PBYR1645 series is supplied
tab
cathode
in the conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR16
40
45
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 116 ˚C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb ≤ 131 ˚C
-
16
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 131 ˚C
-
32
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
˚C
temperature
T
stg
Storage temperature
- 65
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
1.5
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
k
a
12
1
tab
2
July 1998
1
Rev 1.200


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