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2SC4497 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4497 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() www.iscsemi.com 1 isc Silicon NPN Power Transistor 2SC4497 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 300V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.5V(Max) @IC=20mA APPLICATIONS · Switching Regulators · Converters · Power Amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 100 mA IB Base current 20 mA PC Collector Power Dissipation @TC=25℃ 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Podobny numer części - 2SC4497 |
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Podobny opis - 2SC4497 |
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