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STTH112RL Arkusz danych(PDF) 3 Page - STMicroelectronics

Numer części STTH112RL
Szczegółowy opis  High voltage ultrafast rectifier
PDF  7 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH112RL Arkusz danych(HTML) 3 Page - STMicroelectronics

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STTH112
Electrical characteristics
3/7
Figure 3.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4,
Lleads = 10mm) (DO-41).
Figure 4.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA).
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Z/R
th(j-c)
th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Figure 5.
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)(SMB).
Figure 6.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35 µm) (DO-41, SMB).
Figure 7.
Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
circuit board FR4, copper
thickness: 35 µm) (SMA).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
012
34567
89
10
S(cm²)
DO-41
L
=10mm
leads
SMB
R
(°C/W)
th(j-a)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S(cm²)
SMA



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