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SCM40N120PCT Arkusz danych(PDF) 1 Page - Goodwork Semiconductor Co., Ltd .

Numer części SCM40N120PCT
Szczegółowy opis  1200V /40 mΩ N-channel SiC Power MOSFET
PDF  5 Pages
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Producent  GWSEMI [Goodwork Semiconductor Co., Ltd .]
Strona internetowa  http://www.goodwork.com.tw/
Logo GWSEMI - Goodwork Semiconductor Co., Ltd .

SCM40N120PCT Arkusz danych(HTML) 1 Page - Goodwork Semiconductor Co., Ltd .

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1200V /40 mΩ N-channel SiC Power MOSFET
SCM40N120PCT
Features
Low on-resistance RDS(on)
Best thermal conductivity and behavior
High speed switching
High robustness of dv/dt
Low capacitances and low gate charge
Low gate resistance for high-frequency switching
Easy to parallel
Halogen Free, RoHS Compliant
Applications
Switching mode power supply
PV inverter
Uninterruptible Power Supply
Motor Drives
DC/DC converters
EV charging
TO-247
1
2
3
Circuit Diagram
2
3
1:
2:
3:
*1:
Gate
Drain
Source
Body Diode
1
*1
Absolute Maximum Rating (Ta = 25°C)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source voltage
1200
V
VGSS
Gate-Source voltage (DC)
-4 to 20
V
ID
Continuous Drain Current
55
A
Tj
Junction temperature
175
°
C
TSTG
Storage temperature
-55/+175
°
C
PD
Power dissipation
288
W
Thermal characteristics
Symbol
Parameter
Typ.
Typ.
Units
Rth (JC)
Thermal resistance, junction-case
0.4
0.52
°C /W


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