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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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SCS1065B Arkusz danych(PDF) 1 Page - Goodwork Semiconductor Co., Ltd . |
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SCS1065B Arkusz danych(HTML) 1 Page - Goodwork Semiconductor Co., Ltd . |
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1 / 4 page  SCS1065B 650V/10A SiC Schottky Barrier Diode TO-263 1 2 3 Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements Features Halogen Free, RoHS Compliant Applications Power Factor Correction in SMPS Solar inverter Uninterruptible Power Supply Data Center Circuit Diagram 3 1 2 1: Cathode 2: Anode 3: Cathode Motor Drives Absolute Maximum Rating Symbol Parameter Value Unit Test Condition VRM Repetitive peak reverse voltage 650 V TC = 25°C IF Continuous forward current 10 A TC = 135°C IFSM Surge non-repetitive forward current 90 A TC = 25°C, tp=10ms, Sine half wave Tj Junction temperature 175 ° C TSTG Storage temperature -55/+175 °C PD Total power dissipation 75 W TC = 25°C |
Podobny numer części - SCS1065B |
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Podobny opis - SCS1065B |
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