BUW23 datasheet(1/2 Pages) ISC

Numer części	BUW23

Szczegółowy opis	Silicon PNP Power Transistor

PDF	2 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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Silicon PNP Power Transistor

BUW23

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -400V(Min)

·

DC Current Gain-

: hFE= 20(Min)@ IC= -1A

·

Fast switching speed

·

Large current capacity

APPLICATIONS

·

Power amplifier applications

·

Driver stage amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-400

V

VCEO

Collector-Emitter Voltage

-400

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

PC

Total Power Dissipation

@ TC=25℃

125

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

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