PD55015STR-E datasheet(7/27 Pages) STMICROELECTRONICS

Numer części	PD55015STR-E

Szczegółowy opis	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PDF	27 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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7 / 27 page

PD55015-E, PD55015S-E

Typical performance

7/27

Figure 7.

Drain efficiency vs.

output power

Figure 8.

Input return loss vs. output power

Figure 9.

Output power vs.

bias current

Figure 10.

Drain efficiency vs. bias current

Figure 11.

Output power vs.

drain voltage

Figure 12.

Drain efficiency vs. drain voltage

Pout, OUTPUT POWER (W)

500 MHz

520 MHz

480 MHz

Vdd = 12.5 V

Idq = 150 mA

Pout, OUTPUT POWER (W)

-40

-30

-20

-10

500 MHz

520 MHz

480 MHz

Vdd = 12.5 V

Idq = 150 mA

200

400

600

800

1000

Idq, BIAS CURRENT (mA)

520 MHz

480 MHz

500 MHz

Pin = .7 W

Vdd = 12.5 V

200

400

600

800

1000

Idq, BIAS CURRENT (mA)

500 MHz

480 MHz

520 MHz

Pin = .7 W

Vdd = 12.5 V

121314151617

VDS, DRAIN-SOURCE VOLTAGE (V)

520 MHz

480 MHz

500 MHz

Idq = 150mA

Pin = .7 W

1011

14151617

VDS, DRAIN-SOURCE VOLTAGE (V)

500 MHz

520 MHz

480 MHz

IDQ = 150mA

Pin = .7 W

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