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2SC4098 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4098 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC4098 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V(Min) · DC Current Gain- : hFE= 56(Min)@ IC= 1mA · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @ TC=25℃ 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Podobny numer części - 2SC4098 |
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Podobny opis - 2SC4098 |
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